The top priority of "Nanniwan" project-graphene chip! Huawei's new chip field is advancing rapidly

Today, Yu Chengdong, president of Huawei's consumer business, said that Huawei would stop the production of Kirin chips. When I heard this news, I wanted to cry, and I felt really sad! As a loyal iron powder, I am very lost!

I remember Yu Chengdong said at a press conference in 218 that Huawei has entered the research and development of graphene chips, and the electromagnetic delay time of graphene-made chips has been shortened by a full 1 times, which also means that the signal processing time of graphene chips can be shortened by 1 times, and the operation speed can be increased by 1 times, which makes people excited! Speaking this news from Mr. Yu for 18 years also shows that Huawei's research and development time for graphene chips is not short!

Graphene is a high-end material in the manufacturing field, even known as the strongest crystal in the world. This material has excellent thermal and electrical conductivity and strong moldability, which makes it a universal superconducting material. It is precisely because of the great potential of graphene in industrial development that scientists in China have been paying close attention to the development of graphene material technology for a long time, and have made efforts to break through this technology. Now graphene has achieved success in the field of chips.

at present, all major scientific and technological powers in the world are committed to developing supercomputers, and the performance of these computers can not be achieved without various chips. After all, the key to the strength of computer computing power lies in the processing speed of chips. Due to the influence of traditional chip technology, it has become very difficult to improve the computing performance of existing computers. At present, the mainstream practice in various countries is to add more chips to computers. However, the emergence of graphene chips has fundamentally solved this problem. Because the speed performance of graphene chips has increased by 1 times, it is a piece.

because of its ultra-thin structure and excellent physical properties, graphene shows excellent performance and attractive application prospects in FET applications. For example, Obradovic and other studies have found that compared with carbon nanotubes, Graphene FET has a lower working voltage. The on-off ratio of graphene band FET with gate width less than 1nm prepared by Wang < P > is 7 times of 1. FET prepared by thermal evaporation of 4H-SiC epitaxial graphene by Wu has electron and hole mobilities of 5,4 and 4,4 cm2 /V, respectively. S, much higher than traditional semiconductor materials such as SiC and Si; ﹔Lin et al. prepared a high-performance graphene FET with a gate length of 35nm and a carrier mobility of 27 cm2 /V? S, the cutoff frequency is 5GHz, and it is further improved to 1GHz﹔Liao the follow-up study. The transconductance of graphene FET prepared by Liao et al. is 3.2mS/μm, and the highest cutoff frequency up to now is 3GHz, far exceeding the Si-FET with the same gate length (~ 4 GHz). However, because the intrinsic energy gap of graphene is zero, and its conductivity does not drop to zero at Fermi level, but reaches a minimum value, which is fatal to the manufacture of transistors, because graphene is always in an "on" state.

in addition, zero band gap means that logic circuits cannot be made, which becomes the main difficulty and challenge for graphene to be applied to transistors and other devices. Therefore, how to realize the opening and regulation of graphene energy band needs to be studied and solved urgently.

Nano-carbon materials, especially graphene, have excellent electrical, optical, magnetic, thermal and mechanical properties, and are ideal nano-electronic and optoelectronic materials. Graphene has a special geometric structure, which makes the electronic state near fermi surface mainly an extended π state. Because there are no surface dangling bonds, the scattering of extended π states by defects of surface and nano-carbon structure hardly affects the transmission of electrons in these materials. At room temperature, both electrons and holes have extremely high intrinsic mobility (more than 1, cm2 /V? S), which exceeds the best semiconductor material (the electron mobility of a typical silicon field effect transistor is 1 cm2 /V? S )。 As an electronic material, graphene can be used to obtain metal and semiconductor tubes by controlling its structure. Under the condition of small bias, the energy of electrons is not enough to excite optical phonons in graphene, but the interaction with acoustic phonons in graphene is very weak, and its average free path can be as long as several microns, which makes carriers present perfect ballistic transport characteristics in typical graphene devices with a length of several hundred nanometers. The Fermi velocity of electrons in typical metallic graphene is < P >, and the room temperature resistivity is < P >, which is superior to the best metal conductor, for example, its conductivity exceeds that of copper. Because the C-C bond in graphene structure is one of the strongest chemical bonds in nature, it not only has excellent electrical conductivity, but also has a thermal conductivity far exceeding that of the best known thermal conductor, reaching 6, W/MK. In addition, graphene structure has no low-energy defects or dislocations that can cause atomic motion in metals, so it can withstand a current of more than 1 to the ninth power A square centimeter, far exceeding the upper limit of 1 to the sixth power A square centimeter that copper interconnects in integrated circuits can withstand, and it is an ideal nano-scale conductive material. Theoretical analysis shows that electronic devices based on graphene structure can have very good high-frequency response, and the operating frequency of ballistic transport transistors is expected to exceed THz, and its performance is better than all known semiconductor materials.

so graphene is that most ideal semiconductor material for chip at present! Huawei started the research and development of graphene chips a few years ago, and some time ago revealed the patent of Huawei's chip production technology and the recruitment of chip technology-related personnel, indicating that Huawei has made a new breakthrough in the field of graphene chips. What needs to be solved now may be the research and development and debugging of production technology and production equipment. I believe that in the next two years, Huawei's Kirin chips will use new materials (graphene), new chip architecture and new production technology, which may be one of the core projects to beautify the "Nanniwan" project!

No matter whether it is a minefield or an abyss, our great Huawei will break through all obstacles without hesitation and quickly grow into the greatest company! @ Zhao Ming @ Huawei China @ Yu Chengdong @ Huawei Terminal @ Glory Bear

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