The gallium nitride market is coming, which domestic enterprises are laying out?

A few days ago, the news that Hubble, a subsidiary of Huawei, invested in Tian Yue, Shandong Province, and the third-generation semiconductor materials represented by silicon carbide (SiC) and gallium nitride (GaN) once again entered the public's field of vision, attracting the attention of the industry.

In fact, with the continuous progress of semiconductor technology, the requirements for the performance, efficiency and miniaturization of semiconductor devices are getting higher and higher, and the traditional silicon semiconductor materials can not meet the performance requirements gradually. The third generation semiconductor materials such as silicon carbide and gallium nitride have become the focus of the world's competitive layout. While accelerating the development of integrated circuit industry, China has incorporated the development of the third generation semiconductor technology into its national strategy.

Now the arrival of the 5G era will promote the revolutionary changes of semiconductor materials. Among them, gallium nitride devices are widely used in communication, national defense and other fields because of their high performance, and their market demand is expected to usher in explosive growth in the 5G era. With the advent of the tuyere, which domestic enterprises are currently in the layout? Domestic gallium nitride enterprises mainly come from the following categories: substrates, epitaxial wafers, manufacturing, IDM.

GaN substrate enterprise

Dongguan zhongjia semiconductor technology co., ltd

Dongguan Zhonggua Semiconductor Technology Co., Ltd. was established in June 2009, headquartered in Dongguan, Guangdong Province, with a total registered capital of 65.438+0.3 billion yuan, a factory building and office area of * * * 654.38+0.7000 square meters, and a large R&D center in Beijing. It is a domestic enterprise specializing in producing gallium nitride substrate materials.

Official website shows that Zhonggua Semiconductor has built the first professional gallium nitride substrate material production line in China, and prepared a self-supporting GaN substrate with the thickness of 1 100 micron, which can be stably produced. 2065438+February 2008, Zhonggua Semiconductor realized the trial production of 4-inch GaN self-supporting substrate.

Dongguan Zhongjing Semiconductor Technology Co., Ltd.

Dongguan Zhongjing Semiconductor Technology Co., Ltd. was established on 20 10, which is the third key industrialization project of Guangdong Everbright Enterprise Group in the semiconductor field after Zhonggua Semiconductor and Zhongtu Semiconductor.

Based on the manufacturing technology of precision semiconductor equipment such as HVPE equipment and GaN substrate, MCC focuses on the development of Mini/MicroLED epitaxy and chip technology, and extends to the direction of new display modules. At the same time, based on GaN substrate material technology, MCC will incubate international cutting-edge technologies such as VCSEL, power electronic devices, compound semiconductor RF devices, car lamp packaging modules, laser packaging modules, and carry out global industrial layout.

Suzhou nawei technology co., ltd

Suzhou Navi Technology Co., Ltd. was established in 2007, devoted to the research and development and industrialization of gallium nitride single crystal substrate, realized the production of 2-inch gallium nitride single crystal substrate, completed the engineering technology development of 4-inch products, and broke through the key technology of 6-inch. Now it is one of the few units in the world that can provide 2-inch gallium nitride single crystal products in batches.

Official website shows that at present, Navitek's GaN single crystal substrate products have been provided to more than 300 customers, and the production capacity is increasing, and it is developing into the enterprise application market. The key breakthrough directions are blue-green semiconductor lasers, high-power power electronic devices, high-reliability high-power microwave devices and other major fields.

Jiate Semiconductor Technology (Shanghai) Co., Ltd.

Gate Semiconductor Technology (Shanghai) Co., Ltd. was established in April 20 15, mainly engaged in the growth of large-size high-quality low-cost gallium nitride substrates, in order to promote many semiconductor enterprises to purchase and use gallium nitride substrates at reasonable prices. Gate Semiconductor independently developed HVPE equipment and used it to grow high-quality gallium nitride substrates.

Official website shows that GaTe Semiconductor has successfully grown a 4-inch self-supporting gallium nitride substrate with the help of its own HVPE equipment. Gat Semiconductor said that the world's largest gallium nitride substrate growth base will be built in the next few years to further promote the wide application of gallium nitride substrates in the semiconductor material market, and it will rely on self-supporting GaN substrates to develop and manufacture high-end LEDs, power electronics and other devices in the middle and lower reaches.

GaN epitaxial wafer enterprise

Suzhou Zhan Jing Semiconductor Co., Ltd.

Suzhou Zhan Jing Semiconductor Co., Ltd. was established in March 20 12, and is committed to the research and development and industrialization of GaN epitaxial materials. In August of 20 13, Zhan Jing semiconductor began to build a gan epitaxial material production line in Suzhou nano city, with an annual output of 20,000 gan epitaxial wafers of150 mm; At the end of 20 14, Zhan Jing Semiconductor released its commercial 8-inch silicon-based gallium nitride epitaxial wafer products.

Official website said that up to now, Zhan Jing Semiconductor has completed the second round of financing to expand its production scale, and the monthly production capacity of 150mm GaN-on-Si epitaxial wafers has reached 10000 wafers. Zhan Jing Semiconductor now has more than 150 customers, who come from famous semiconductor companies and research institutions all over the world.

Ju neng Jing yuan (Qingdao) semiconductor material co., ltd

Juneng Jingyuan (Qingdao) Semiconductor Materials Co., Ltd. was established in June 2065438+2008, focusing on the growth of epitaxial materials for power electronics applications. Aiming at the epitaxial material market, Juneng Crystal Source is developing the growth technology of silicon-based gallium nitride materials and selling the silicon-based gallium nitride epitaxial materials as products.

20 18- 12, the 8-inch GaN-on-Si epitaxial wafer which has reached the leading level in the global industry has been successfully developed. This type of epitaxial wafer achieves a high withstand voltage of 650V/700V, while maintaining the high crystal quality, high uniformity and high reliability of epitaxial materials, which can fully meet the application requirements of high-voltage power electronic devices in industry.

Beijing Century Guangjin Semiconductor Co., Ltd.

Beijing Century Guangjin Semiconductor Co., Ltd. was established on February 20 10. After years of development, Guangjin has become an enterprise that integrates the research, development, design, production and sales of semiconductor single crystal materials, epitaxy, devices and modules, and runs through the entire industrial chain of the third generation semiconductor.

In the field of silicon carbide, Guangjin has realized the whole industrial chain of silicon carbide, while in the field of gallium nitride, official website mainly displays gallium nitride epitaxial wafers.

Julicheng Semiconductor (Chongqing) Co., Ltd.

Julicheng Semiconductor (Chongqing) Co., Ltd. was established in September 20 18. Chongqing Jieshun Technology Co., Ltd. is a company established in Dazu District. 2065438+September 2008, the Dazu District Government of Chongqing signed a contract with Chongqing Jieshun Technology Co., Ltd. to build the "Julicheng epitaxial wafer and chip production line project" in Chongqing.

2018165438+10, Julicheng Semiconductor (Chongqing) Co., Ltd. held a groundbreaking ceremony and the project officially started. The project covers an area of 500 mu and plans to invest 5 billion yuan. A whole industrial chain base integrating research and development, production, packaging and testing, product design and application of gallium nitride epitaxial wafers and gallium nitride chips will be built in Dazu High-tech Zone. On June 5, 20 19, the first phase of the project was officially started, and the mass production of epitaxial wafers is expected to start on June 0/0 this year.

Gan manufacturing enterprise

Chengdu haiwei Huaxin technology co., ltd

Established on 20 10, Chengdu haiwei Huaxin technology co., ltd. is the first pure wafer foundry enterprise in China to provide 6-inch GaAs/GaN microwave integrated circuits. It is understood that Haiwei Huaxin was jointly established by Haite Gaoxin and 29 state-owned power companies. 2065438+2005 65438+ 10, Haite High-tech acquired the original shareholder equity of Haiwei Huaxin for 555 million yuan, and acquired 52.95438+0% equity of Haiwei Huaxin as its controlling shareholder by way of capital increase, thus getting involved in the research and development of high-end compound semiconductor integrated circuit chips.

Haiwei Huaxin 6-inch second/third generation semiconductor integrated circuit chip production line was put into trial production in August 2065438+2006. Official website shows that Haiwei Huaxin has developed gallium nitride OEM technology for base stations and gallium arsenide OEM technology for 5G mid-band mobile phones below 6GHz, and released 0. 15um gallium arsenide OEM technology for millimeter wave band. Gaas VCSEL laser technology and silicon-based gallium nitride manufacturing technology for power electronics have also made great progress in 20 19.

Xiamen San' an integrated circuit co., ltd

Xiamen Sanan Integrated Circuit Co., Ltd. was established on 20 14, which is a subsidiary of Sanan Optoelectronics, an LED chip manufacturing company, and operates based on gallium nitride and gallium arsenide technology. Is a foundry specializing in compound semiconductor manufacturing, serving the markets of radio frequency, millimeter wave, power electronics, optics, etc., and has the integrated industry capability of substrate materials, epitaxial growth and chip manufacturing.

The total planned land area of San 'an integration project is 28 1 mu, with a total investment of 3 billion yuan. The planned production capacity is 300,000 GaAs high-speed semiconductor epitaxial wafers, 300,000 GaAs high-speed semiconductor chips, 60,000 GaN high-power semiconductor epitaxial wafers and 60,000 GaN high-power semiconductor chips per year. Official website shows that Sanan Integrated has built professional and large-scale production lines for 4-inch and 6-inch composite wafers in the fields of microwave and RF, and introduced SiC power diodes and silicon-based gallium nitride power devices with high reliability and high power density in the field of electronic circuits.

China resources micro-electrons co., ltd

China Resources Microelectronics Co., Ltd. is a subsidiary of China Resources Group, which is responsible for the investment, development and management of microelectronics business. It is also a comprehensive microelectronics enterprise with important influence in China. It focuses on analog and power semiconductors, and its business includes integrated circuit design, mask manufacturing, wafer manufacturing, package testing and discrete devices. At present, it has five 6-8 inch wafer production lines, two packaging production lines, 1 mask production line and three design companies, and has a complete semiconductor industry chain in China.

20 17, 12, China resources microelectronics completed the acquisition of AVIC (Chongqing) microelectronics co., ltd (later renamed as "China resources microelectronics (Chongqing) co., ltd"). Chongqing China Resources Microelectronics adopts 8-inch 0. 18 micron process technology to produce chips, and has built independent MEMS and compound semiconductor process lines outside the main production line, which has the large-scale production capacity of gallium nitride power devices.

Hangzhou Shi Lan micro-electrons co., ltd

Hangzhou lance microelectronics co., ltd was established in 1997, specializing in IC chip design and semiconductor related products manufacturing. 200 1, the first 5-inch chip production line was built in Hangzhou, and now it has become an IDM enterprise in China.

In recent years, Sloan has gradually laid out the third generation compound power semiconductors. On 20 17, the pilot line of 6-inch silicon-based gallium nitride power devices was opened in Sylvia. In June, 20 18 and 12 inch chip production lines and Xiamen Shilanwei advanced compound semiconductor production line were started, in which the total investment of 4/6 inch compatible advanced compound semiconductor device production line was 5 billion yuan, and it was positioned as the third generation power semiconductor, optical communication device and high-end LED chip.

Gan IDM company

Suzhou nengxun high energy semiconductor company

Suzhou Nengxun High Energy Semiconductor Co., Ltd. was established in 20 1 1 year. It is committed to the technology and industrialization of wide band gap semiconductor gallium nitride electronic devices, and provides efficient semiconductor products and services for 5G mobile communication, broadband communication, industrial control, power supply and electric vehicles.

Nengxun Semiconductor adopts integrated design and manufacturing (IDM) mode, and independently develops gallium nitride material growth, chip design, wafer technology, package testing, reliability and application circuit technology. At present, the company has 256 patents. The company built a gallium nitride (GaN) electronic device factory in Jiangsu, covering an area of 55 mu, with an accumulated investment of 654.38 billion yuan.

Jiangsu nenghua micro-electrons science and technology development co., ltd

Jiangsu Nenghua Microelectronics Technology Development Co., Ltd. was established in June 20 10. It is a high-tech company led by Dr. Zhu Tinggang, an expert of the National Thousand Talents Program, and founded by the returning team from the United States, Australia and Japan. Specializing in the design, research, production, manufacture and sales of high-performance composite semiconductor wafers represented by gallium nitride and their power devices, chips and modules.

Nenghua Microelectronics has successively undertaken the industrialization project of high-power GaN power electronic devices and materials, which is the special project of national electronic information industry revitalization and technological transformation, and the key technology project of new power electronic devices based on GaN, which is the key project of national strategic advanced electronic materials research and development plan. In 20 17, Nenghua Microelectronics built an 8-inch gallium nitride chip production line and put it into use.

Ying Nuo sai ke (Zhuhai) technology co., ltd

Innosec (Zhuhai) Technology Co., Ltd. was established in February 2065438+2005. The company adopts IDM full industrial chain mode and is committed to building the third generation semiconductor production platform integrating R&D, design, epitaxial growth, chip manufacturing, testing and failure analysis. On October 20 1 17 10, inno seco 8-inch silicon-based gallium nitride production line was put into production, becoming the first 8-inch silicon-based gallium nitride production line in China to realize mass production. Its main products include 30V-650V gallium nitride power and 5G RF devices.

On June 20 18, the Innoseco Suzhou semiconductor chip project with a total investment of 6 billion yuan was started. On August 30th this year, the main workshop of the project was capped. It is estimated that the production equipment will officially enter the factory at the end of June 18, and mass production can be realized in 2020. Focusing on core products such as gallium nitride and silicon carbide, the project will become the third generation semiconductor industry chain R&D and production platform integrating R&D, design, epitaxial production, chip manufacturing and sub-packaging testing.

Dalian COVID-19 Technology Co., Ltd.

Dalian COVID-19 Technology Co., Ltd. was established in March 2065438+2006. The company adopts the integrated design and manufacturing (IDM) business model, mainly engaged in the research, design, production and sales of the third generation semiconductor silicon-based gallium nitride epitaxial materials and power electronic devices. Products are used in power management, solar inverters, electric vehicles and industrial motor drives.

Official website said that COVID-19 Science and Technology has built the first 6-inch silicon-based gallium nitride epitaxial and power device wafer production line in China. 2065438+March 2009, COVID-19 Science and Technology took the lead in introducing 650 volt silicon-based gallium nitride power devices in China (passed the 1000 hour HTRB reliability test) and officially put them on the market.

Jiangsu huagong semiconductor co., ltd

Jiangsu Huagong Semiconductor Co., Ltd. was established in 2065438+May 2006 with a registered capital of 200 million yuan and an initial investment of 10 billion yuan. Official website said that at present, the company has fully mastered the GaN epitaxial technology with high conductivity, high voltage resistance and high stability on large-size Si substrates, and mastered the manufacturing technology of enhanced power electronic devices with independent intellectual property rights.

According to official website, South China University of Technology Semiconductor can provide epitaxial wafer products of 2-inch, 4-inch, 6-inch and 8-inch GaN-on-Si power electronic devices, and design and manufacture them based on GaN-on-Si epitaxial technology with independent intellectual property rights of South China University of Technology to provide 650V/5A-60A series high-speed power devices.

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