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Semiconductor physics
T=77k Low temperature weak ionization N0 = [(ndnc/2) (1/2)] exp (△ ed/2k0t) NC is proportional to t 3/2.
△ED=0.044eV
T=300k strong ionization region n0 = nd
T=500k transition zone ni 2 = n0 * P0N0=Nd+p0 simultaneous solution;
T=800k high temperature intrinsic region n0 = p0 = ni>& gt Nd.
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